BZT52H-B10 NXP [NXP Semiconductors], BZT52H-B10 Datasheet - Page 4

• Manufacturer Part Number: BZT52H-B10
• Description: Single Zener diodes in a SOD123F package
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
7. Characteristics
Table 8.
T
BZT52H_SER
Product data sheet
BZT52H
-xxx
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
j
= 25
°
C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Working
voltage
V
I
Min
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
Z
Z
= 5 mA
(V);
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
Table 7.
T
[1]
Symbol
V
j
F
= 25
Pulse test: t
Maximum differential
resistance r
I
400
500
500
500
500
500
500
500
480
400
150
80
80
80
°
Z
C unless otherwise specified.
= 1 mA
Parameter
forward voltage
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
dif
I
85
83
95
95
95
95
95
78
60
40
10
8
10
10
Z
= 5 mA
(Ω)
Rev. 3 — 7 December 2010
Reverse
current I
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
Conditions
I
F
= 10 mA
1
1
1
1
1
1
1
2
2
4
V
2
4
5
5
R
R
(μA)
(V)
Single Zener diodes in a SOD123F package
Temperature
coefficient
S
I
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
Z
Z
= 5 mA
(mV/K);
Max
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
[1]
BZT52H series
Min
-
Diode
capacitance
C
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
d
(pF)
Typ
-
[1]
© NXP B.V. 2010. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
6.0
6.0
4.0
4.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
ZSM
Max
0.9
(A)
[2]
Unit
V
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