l033c12v Advanced Micro Devices, l033c12v Datasheet - Page 18
l033c12v
Manufacturer Part Number
l033c12v
Description
32 Megabit 4 M X 8-bit Cmos 3.0 Volt-only Uniform Sector Flash Memory - Advanced Micro Devices
Manufacturer
Advanced Micro Devices
Datasheet
1.L033C12V.pdf
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Addresses
Addresses
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Data
Data
27h
36h
00h
00h
04h
00h
0Ah
00h
05h
00h
04h
00h
16h
00h
00h
00h
00h
01h
3Fh
00h
00h
01h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
Table 7. Device Geometry Definition
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 6. System Interface String
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
Am29LV033C
N
byte
PP
PP
N
times typical
pin present)
pin present)
N
N
times typical (00h = not supported)
N
Description
Description
times typical
ms (00h = not supported)
N
N
N
times typical
N
N
µs (00h = not supported)
ms
µs
17
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