MRF8S8260H FREESCALE [Freescale Semiconductor, Inc], MRF8S8260H Datasheet - Page 6

• Manufacturer Part Number: MRF8S8260H
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF8S8260HR3 MRF8S8260HSR3
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
1
Figure 7. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
3
PEAK--TO--AVERAGE (dB)
Input Signal
4
21.5
18.5
15.5
23
20
17
14
24
20
16
12
Figure 5. Single- -Carrier W- -CDMA Power Gain, Drain
5
8
4
0
650
1
G
V
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
ps
DD
Efficiency and ACPR versus Output Power
6
Figure 6. Broadband Frequency Response
= 28 Vdc, I
725
850 MHz
895 MHz
7
TYPICAL CHARACTERISTICS
800
P
W- -CDMA TEST SIGNAL
DQ
out
8
, OUTPUT POWER (WATTS) AVG.
= 1500 mA
875 MHz
f, FREQUENCY (MHz)
875
9
10
IRL
Gain
10
950
875 MHz
V
P
I
DQ
DD
in
1025
895 MHz
= 0 dBm
= 1500 mA
--100
= 28 Vdc
--10
--20
--30
--40
--50
--60
--70
--80
--90
895 MHz
10

0
D
--9
850 MHz
875 MHz
1100
100
ACPR
Figure 8. Single- -Carrier W- -CDMA Spectrum
--ACPR in 3.84 MHz
--7.2
Integrated BW
1175
850 MHz
--5.4
400
1250
--3.6
66
55
44
33
22
11
0
10
5
0
--5
--10
--15
--20
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
Freescale Semiconductor, Inc.
0
0
--10
--20
--30
--40
--50
--60
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
RF Device Data
5.4
7.2
9