MRF8S8260H FREESCALE [Freescale Semiconductor, Inc], MRF8S8260H Datasheet - Page 5

• Manufacturer Part Number: MRF8S8260H
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor, Inc.
21.5
20.5
19.5
22
21
20
19
Figure 2. Output Peak- -to- -Average Ratio Compression (PARC)
--20
--30
--40
--50
--60
--70
25
24
23
22
21
20
19
18
17
16
15
--1
--2
--3
--4
--5
1
0
820
40
1
Broadband Performance @ P
V
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 875 MHz
Figure 3. Intermodulation Distortion Products

DD
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
D
Compression (PARC) versus Output Power
DD
Figure 4. Output Peak- -to- -Average Ratio
= 28 Vdc, P
840
= 28 Vdc, I
TYPICAL CHARACTERISTICS
G
60
ps
860
versus Two- -Tone Spacing
--1 dB = 63.8 W
out
P
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
DQ
TWO--TONE SPACING (MHz)
--2 dB = 89.6 W
out
DD
= 80 W (PEP), I
= 1500 mA, f = 875 MHz
, OUTPUT POWER (WATTS)
= 28 Vdc, P
f, FREQUENCY (MHz)
880
80
ACPR
IRL
--3 dB = 119.8 W
900
10
0.01% Probability on CCDF
out
DQ
IM5--U
IM7--U
IM5--L
IM7--L
= 70 W (Avg.), I
= 1500 mA
100
920
out
IM3--L
ACPR
= 70 Watts Avg.
IM3--U
940
DQ
PARC
120
= 1500 mA

960
D
PARC
G
ps
980
140
100
38
36
34
32
30
56
50
44
38
32
26
20
--36
--37
--38
--39
--40
--41
MRF8S8260HR3 MRF8S8260HSR3
--25
--30
--35
--40
--45
--50
--55
0
--4
--8
--12
--16
--20
--1
--1.2
--1.4
--1.6
--1.8
--2
5