MRF8S8260H FREESCALE [Freescale Semiconductor, Inc], MRF8S8260H Datasheet - Page 3

• Manufacturer Part Number: MRF8S8260H
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P
IMD Symmetry @ 80 W PEP, P
VBW Resonance Point
Gain Flatness in 45 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Order Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30C to +85C)
(--30C to +85C)
@ 1 dB Compression Point, CW
(1)

Characteristic
30 dBc
out
where IMD Third
(T
out
A
= 25C unless otherwise noted)
= 70 W Avg.
DD
= 28 Vdc, I
Symbol
(continued)
IMD
VBW
P1dB
P1dB
G
G
sym
F
DQ
res
= 1500 mA, 850--895 MHz Bandwidth
Min
—
—
—
—
—
—
MRF8S8260HR3 MRF8S8260HSR3
260
0.016
0.002
Typ
9.7
0.3
60
(1)
Max
—
—
—
—
—
—
dB/C
dB/C
Unit
MHz
MHz
dB
W
3