MRF7S21170HR3_11 FREESCALE [Freescale Semiconductor, Inc], MRF7S21170HR3_11 Datasheet - Page 3

• Manufacturer Part Number: MRF7S21170HR3_11
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Video Bandwidth @ 170 W PEP P
Gain Flatness in 60 MHz Bandwidth @ P
Average Deviation from Linear Phase in 60 MHz Bandwidth
Average Group Delay @ P
Part--to--Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
@ P
f = 2140 MHz, Six Sigma Window
(--30°C to +85°C)
(--30°C to +85°C)
out
= 170 W CW
out
Characteristic
= 170 W CW, f = 2140 MHz
out
where IM3 = --30 dBc
(T
out
A
out
= 25°C unless otherwise noted)
= 50 W Avg.
= 170 W CW
DD
= 28 Vdc, I
(continued)
Symbol
∆P1dB
Delay
VBW
∆Φ
∆G
G
Φ
DQ
F
= 1400 mA, 2110--2170 MHz Bandwidth
Min
—
—
—
—
—
—
—
MRF7S21170HR3 MRF7S21170HSR3
0.015
1.95
0.01
Typ
0.4
1.7
25
18
Max
—
—
—
—
—
—
—
dB/°C
dB/°C
MHz
Unit
dB
ns
°
°
3