MRF7S21170HR3_11 FREESCALE [Freescale Semiconductor, Inc], MRF7S21170HR3_11 Datasheet - Page 2

• Manufacturer Part Number: MRF7S21170HR3_11
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MRF7S21170HR3 MRF7S21170HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. V
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
DS
DS
GG
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 2 x V
GS(Q)
DS
D
D
D
D
GS
GS
= 372 μAdc)
= 1400 mAdc)
= 1400 mAdc, Measured in Functional Test)
= 3.72 Adc)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
= 0 Vdc)
= 0 Vdc)
(2)
Characteristic
(1)
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
V
ACPR
I
I
I
C
PAR
GG(Q)
DS(on)
C
GS(th)
GS(Q)
G
= 1400 mA, P
IRL
DSS
DSS
GSS
η
oss
rss
ps
D
Min
1.2
4.5
0.1
5.7
out
15
29
—
—
—
—
—
—
—
—
= 50 W Avg., f = 2167.5 MHz,
0.15
Typ
703
--37
--15
2.7
5.4
0.9
6.1
16
31
—
—
—
2
1A (Minimum)
IV (Minimum)
B (Minimum)
Class
Freescale Semiconductor
Max
500
--35
2.7
6.5
0.3
10
18
—
—
—
—
—
--9
1
RF Device Data
(continued)
μAdc
μAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
%