MRF7S21170HR3_11 FREESCALE [Freescale Semiconductor, Inc], MRF7S21170HR3_11 Datasheet - Page 16

• Manufacturer Part Number: MRF7S21170HR3_11
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

16
MRF7S21170HR3 MRF7S21170HSR3
Revision
5
6
Mar. 2011
Apr. 2008
Date
• Corrected On Characteristics table I
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
• Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
• Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
• Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
2.7 Adc to 3.72 Adc; tightened V
test values, p. 2
numbers, p. 4
Signal, to better represent production test signal, p. 8
number, PCN13628, p. 1, 2
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
p. 15
REVISION HISTORY (continued)
GS(th)
D
value for V
minimum and maximum values to match production
Description
GS(th)
from 270 μAdc to 372 μAdc and V
Freescale Semiconductor
DS(on)
RF Device Data
from