k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 52

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS (II)
K4J55323QG
Row active time
Row cycle time
Refresh row cycle time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge (PRE or Auto-PRE)
Last data in to Read command
Mode register set cycle time
Auto precharge write recovery time + Precharge
Exit self refresh to Read command
Power-down exit time
Refresh interval time
Parameter
Symbol
tRCDW
tRCDR
tCDLR
tPDEX
tMRD
tRRD
tXSR
tRAS
tRFC
tDAL
tREF
tWR
tRC
tRP
20000
- 52 /53 -
7tCK
+tIS
Min
25
35
10
21
45
12
11
8
8
6
7
-
-12
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
20000
6tCK
Min
+tIS
22
31
39
10
10
19
6
9
8
5
6
-
-14
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
20000
6tCK
+tIS
256M GDDR3 SDRAM
Min
19
27
31
17
9
5
8
7
9
4
5
-
-16
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
Rev. 1.3 June 2006
20000
4tCK
+tIS
Min
21
15
27
13
7
4
6
5
7
3
4
-
-20
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
us