k4j55323qg Samsung Semiconductor, Inc., k4j55323qg Datasheet - Page 20

• Manufacturer Part Number: k4j55323qg
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

SCAN DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
*Note : 1. The parameter applies only when SEN is asserted.
K4J55323QG
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
2. All voltages referenced to GND.
under Test
SOUT
PARAMETER/CONDITON
SOE
SOE
SCK
SEN
SSH
SCK
SEN
SSH
Pins
LOW
tSES
tSES
tSCS
tSCS
tSCS
tSDS tSDS
SYMBOL
Figure 2. Scan Capture Timing
Figure 3.Scan Shift Timing
V
V
IH
IL
VALID
(DC)
(DC)
- 20 /53 -
tSAC
Scan Out
V
bit 0
REF
MIN
tSOH
-
+0.15
Not a true clock, but a single pulse or series of pulses
Scan Out
bit 1
V
REF
MAX
256M GDDR3 SDRAM
-
-0.15
Scan Out
bit 2
Rev. 1.3 June 2006
UNITS
DON’T CARE
TRANSITIONING DATA
V
V
Scan Out
bit 3
NOTES
1,2
1,2