2SJ280L HITACHI [Hitachi Semiconductor], 2SJ280L Datasheet - Page 5

• Manufacturer Part Number: 2SJ280L
• Description: SILICON P-CHANNEL MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

–100
–20
–40
–60
–80
500
200
100
0
50
20
10
0
5
–1
V
DD
Reverse Drain Current I
Dynamic Input Characteristics
V
–2
DS
40
Body-Drain Diode Reverse
I = –30 A
Gate Charge Qg (nc)
= –10 V
di/dt = 50 A/ s, V
Ta = 25°C
D
–25 V
–50 V
Recovery Time
–5
80
V
DD
–25 V
–50 V
–10 –20
= –10 V
120
GS
= 0
160
DR
–50 –100
V
(A)
GS
200
0
–4
–8
–12
–16
–20
10000
1000
1000
500
200
100
100
10
50
20
–0.5 –1
10
0
Drain to Source Voltage
f = 1 MHz
V
GS
–10
vs. Drain-Source Voltage
Switching Characteristics
= 0,
V
PW = 2 s, duty 1%
Drain Current
GS
Typical Capacitance
–2
= –10 V, V
t (off)
t (on)
d
d
–20
t
t
f
r
Coss
–5
Ciss
Crss
–30
DD
–10 –20
2SJ280 L , 2SJ280 S
<
=
I
=
:
D
–30 V
(A)
–40
V
DS
(V)
–50
–50