2SJ280L HITACHI [Hitachi Semiconductor], 2SJ280L Datasheet - Page 2
2SJ280L
Manufacturer Part Number
2SJ280L
Description
SILICON P-CHANNEL MOS FET
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet
1.2SJ280L.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SJ280L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
2SJ280 L , 2SJ280 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
voltage
———————————————————————————————————————————
Gate to source breakdown
voltage
———————————————————————————————————————————
Gate to source leak current
———————————————————————————————————————————
Zero gate voltage drain current
———————————————————————————————————————————
Gate to source cutoff voltage
———————————————————————————————————————————
Static drain to source on state
resistance
———————————————————————————————————————————
Forward transfer admittance
———————————————————————————————————————————
Input capacitance
————————————————————————————————
Output capacitance
————————————————————————————————
Reverse transfer capacitance
———————————————————————————————————————————
Turn–on delay time
————————————————————————————————
Rise time
————————————————————————————————
Turn–off delay time
————————————————————————————————
Fall time
———————————————————————————————————————————
Body–drain diode forward
voltage
———————————————————————————————————————————
Body–drain diode reverse
recovery time
———————————————————————————————————————————
* Pulse Test
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
Min
–60
±20
—
—
–1.0
—
————————————————————————
—
17
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.033
0.045
25
3300
1500
480
30
170
500
390
–1.5
200
Max
—
—
±10
–250
–2.25
0.043
0.06
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I F = –30 A, V
diF / dt = 50 A / µs
D
G
D
D
D
D
D
F
GS
DS
GS
GS
DS
DS
GS
GS
L
= –30 A, V
= –10 mA, V
= –1 mA, V DS = –10 V
= –15 A
= –15 A
= –15 A
= –15 A
= ±200 µA, V
= 2
= ±16 V, V
= –50 V, V
= –10 V *
= –4 V *
= –10 V *
= 10 V
= 0
= –10 V
GS
GS
GS
GS
DS
DS
= 0
= 0,
= 0
= 0
= 0
= 0