2SJ280L HITACHI [Hitachi Semiconductor], 2SJ280L Datasheet - Page 4

• Manufacturer Part Number: 2SJ280L
• Description: SILICON P-CHANNEL MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ280 L , 2SJ280 S
–2.0
–1.6
–1.2
–0.8
–0.4
0.08
0.06
0.04
0.02
0.1
–40
0
0
Drain-Source Saturation Voltage
vs. Gate-Source Voltage
Gate to Source Voltage V
Pulse test
Static Drain-Source on State
Resistance vs. Temperature
Case Temperature T (°C)
–2
0
V
GS
–10 V
= –4 V
–4
40
–6
80
Pulse Test
–10 A, –20 A
–10 A, –20 A
I = –30 A
I = –30 A
I = –30 A
D
D
D
C
–8
120
–10 A
–20 A
GS
(V)
–10
160
0.005
100
0.05
0.02
0.01
50
20
10
–0.5 –1
0.5
0.2
0.1
5
2
1
–2
Forward Transfer Admittance
Resistance vs. Drain Current
Static Drain-Source on State
Drain Current I
V
–5 –10 –20
Drain Current
Pulse Test
Tc = 25°C
–25°C
DS
vs. Drain Current
–2
= –10 V
V
GS
= –4 V
–10 V
–5
–10
D
I
D
–50 –100 –200
(A)
–20
(A)
75°C
–50