SI3900DV-T1 VISHAY [Vishay Siliconix], SI3900DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3900DV-T1
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71178
S-50329—Rev. C, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.1
0.5
0.4
0.3
0.2
0.1
0.0
4.5
3.6
2.7
1.8
0.9
0.0
10
1
0.00
0.0
0
V
I
V
D
Source-Drain Diode Forward Voltage
T
DS
1
GS
= 2.4 A
J
On-Resistance vs. Drain Current
V
0.5
= 150_C
0.3
= 10 V
SD
= 2.5 V
Q
− Source-to-Drain Voltage (V)
g
2
I
− Total Gate Charge (nC)
D
− Drain Current (A)
Gate Charge
1.0
0.6
3
4
1.5
0.9
T
J
= 25_C
V
5
GS
1.2
2.0
= 4.5 V
6
1.5
2.5
7
0.40
0.32
0.24
0.16
0.08
0.00
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 2.4 A
I
D
V
= 4.5 V
V
1
4
DS
= 1 A
T
GS
J
0
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
− Gate-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
C
C
C
50
I
oss
D
iss
rss
= 2.4 A
12
3
75
Si3900DV
100
www.vishay.com
16
4
125
150
20
5
3