SI3900DV-T1 VISHAY [Vishay Siliconix], SI3900DV-T1 Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
SI3900DV-T1
Manufacturer Part Number
SI3900DV-T1
Description
Dual N-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SI3900DV-T1.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3900DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3900DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3900DV
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
2
a
a
J
V
GS
= 25_C UNLESS OTHERWISE NOTED)
3 V
= 4.5 thru 3.5 V
2.5 V
1.5 V
3
2 V
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
SD
t
t
rr
fs
gs
gd
r
f
g
4
5
V
V
I
DS
D
DS
^ 1 A, V
V
= 10 V, V
I
F
DS
= 20 V, V
V
V
V
V
V
V
V
I
= 3.0 A, di/dt = 100 A/ms
DS
S
DS
V
Test Condition
GS
GS
DS
DD
DD
= 0 V, V
DS
= 1.05 A, V
w 5 V, V
= V
= 2.5 V, I
= 20 V, V
= 4.5 V, I
= 10 V, R
= 10 V, R
= 5 V, I
GEN
GS
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
D
GS
D
= "12 V
D
GS
GS
= 250 mA
L
L
= 2.4 A
= 2.4 A
= 1.0 A
= 10 W
= 10 W
= 4.5 V
= 0 V
= 0 V
J
D
G
= 85_C
= 2.4 A
= 6 W
10
8
6
4
2
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
Min
0.6
− Gate-to-Source Voltage (V)
5
1.5
0.100
0.160
Typ
2.0
0.79
2.1
0.3
0.4
T
10
30
14
30
5
6
C
25_C
S-50329—Rev. C, 28-Feb-05
= −55_C
Document Number: 71178
2.5
"100
Max
0.125
0.200
1.10
1.5
4.0
10
17
50
25
12
50
1
3.0
125_C
3.5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
4.0