SI3900DV-T1 VISHAY [Vishay Siliconix], SI3900DV-T1 Datasheet
SI3900DV-T1
Available stocks
Related parts for SI3900DV-T1
SI3900DV-T1 Summary of contents
Page 1
... 2.85 mm Ordering Information: Si3900DV-T1 Si3900DV-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
Page 2
... Si3900DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
Page 3
... T J 0.1 0.00 0.3 0.6 0.9 V − Source-to-Drain Voltage (V) SD Document Number: 71178 S-50329—Rev. C, 28-Feb- 4 2.0 2.5 = 25_C 1.2 1.5 Si3900DV Vishay Siliconix Capacitance 300 250 C iss 200 150 100 C oss 50 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
Page 4
... Si3900DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...
Page 5
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...