SI3812DV-T1 VISHAY [Vishay Siliconix], SI3812DV-T1 Datasheet - Page 4

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SI3812DV-T1

Manufacturer Part Number
SI3812DV-T1
Description
N-Channel 20-V (D-S) MOSFET With Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
- 0.0
- 0.2
- 0.4
- 0.6
0.1
0.4
0.2
10
0.01
1
0.1
0.00
- 50
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
V
T
0.3
J
SD
= 150_C
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
10
= 250 mA
- Temperature (_C)
25
0.6
-3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
T
75
J
= 25_C
10
100
-2
1.2
125
Square Wave Pulse Duration (sec)
1.5
150
10
-1
1
0.40
0.32
0.24
0.16
0.08
0.00
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
1
V
Notes:
= 1 A
P
GS
DM
JM
0.1
- Gate-to-Source Voltage (V)
- T
A
t
1
= P
2
Time (sec)
t
2
DM
Z
thJA
I
thJA
D
100
= 2.4 A
t
t
(t)
1
2
S-31725—Rev. E, 18-Aug-03
= 130_C/W
1
3
Document Number: 71069
MOSFET
600
4
10
5
30

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