SI3812DV-T1 VISHAY [Vishay Siliconix], SI3812DV-T1 Datasheet - Page 2
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SI3812DV-T1
Manufacturer Part Number
SI3812DV-T1
Description
N-Channel 20-V (D-S) MOSFET With Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SI3812DV-T1.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3812DV-T1-E3
Manufacturer:
VISHAY
Quantity:
12 000
Company:
Part Number:
SI3812DV-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Company:
Part Number:
SI3812DV-T1-GE3
Manufacturer:
AVX
Quantity:
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Si3812DV
Vishay Siliconix
Notes
a.
Notes
a.
b.
www.vishay.com
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
J
Junction-to-Ambient
Junction to Foot (MOSFET Drain Schottky Kathode)
Junction-to-Foot (MOSFET Drain, Schottky Kathode)
MOSFET + SCHOTTKY SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Schottky Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS (T
Forward Voltage Drop
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
2
Surface Mounted on 1” x1” FR4 Board.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
ti
ti
t A bi
t A bi
b
Parameter
Parameter
t
t
a
a
a
a
a
g
a
a
Parameter
a
a
Symbol
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
I
C
g
R
V
V
t
rm
rm
SD
t
t
rr
fs
gs
gd
r
f
g
F
F
T
g
J
= 25_C UNLESS OTHERWISE NOTED)
St
Steady State
Steady State
Steady State
t
t v 5 sec
V
V
I
d St t
DS
D
5
DS
^ 1 A, V
V
= 10 V, V
I
J
F
DS
= 16 V, V
V
V
V
V
V
V
V
= 3.0 A, di/dt = 100 A/ms
DS
I
DS
V
Test Condition
GS
Test Condition
I
GS
S
V
= 25_C UNLESS OTHERWISE NOTED)
DS
DD
DD
F
V
= 0 V, V
DS
r
= 1.5 A, V
r
= 0.5, T
w 5 V, V
= 20, T
= V
= 2.5 V, I
= 20, T
= 16 V, V
= 4.5 V, I
= 10 V, R
= 10 V, R
= 5 V, I
GEN
V
Device
MOSFET
MOSFET
MOSFET
GS
I
Schottky
Schottky
Schottky
GS
V
F
r
GS
r
= 10 V
= 0.5
GS
, I
= 20
= 4.5 V, R
= 4.5 V, I
J
J
= 0 V, T
J
D
D
GS
= 125_C
= 125_C
GS
D
= 75_C
= "12 V
D
GS
= 250 mA
L
L
= 2.4 A
= 2.4 A
= 1.0 A
= 10 W
= 10 W
= 4.5 V
= 0 V
= 0 V
J
D
G
= 85_C
= 2.4 A
= 6 W
Symbol
R
R
R
R
thJA
thJF
Min
Min
Typical
0.6
5
1
103
130
140
93
75
80
0.100
0.160
0.002
Typ
Typ
0.79
0.42
0.33
0.06
2.1
0.3
0.4
1.5
10
30
14
30
31
5
6
S-31725—Rev. E, 18-Aug-03
Maximum
Document Number: 71069
110
125
150
165
90
95
"100
Max
0.125
0.200
Max
0.100
0.48
1.1
4.0
3.7
0.4
10
17
50
25
12
50
10
1
1
Unit
_C/W
_C/W
Unit
Unit
mA
nA
mA
mA
nC
pF
ns
V
A
W
W
S
V
W
V
V