SUM90P10-19L_08 VISHAY [Vishay Siliconix], SUM90P10-19L_08 Datasheet - Page 4

• Manufacturer Part Number: SUM90P10-19L_08
• Description: P-Channel 100-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.3
400
350
300
250
200
150
100
0.9
0.7
0.5
0.3
0.1
100
50
10
0
- 50
1
25
0.0
- 25
Source-Drain Diode Forward Voltage
Power Derating (Junction-to-Case)
T
50
J
= 150 C
0
T – Case-Temperature (°C)
0.3
V
C
SD
Threshold Voltage
T
25
75
J
– Source-to-Drain Voltage (V)
– Temperature (°C)
50
100
0.6
I
D
75
= 10 mA
125
100
25 C
0.9
125
150
150
175
175
1.2
6000
5000
4000
3000
2000
1000
1000
0.10
0.08
0.06
0.04
0.02
0.00
100
0.1
10
0.0001
0
1
0.1
1
Single Pulse, Junction-to-Case (T
*Limited by r
* V
On-Resistance vs. Gate-to-Source Voltage
2
GS
> minimum V
V
V
DS
3
0.001
GS
– Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
– Gate-to-Source Voltage (V)
4
1
Single pulse
T
Time (sec)
c
GS
25 °C
= 25 °C
5
at which r
0.01
125 °C
S-71207-Rev. D, 18-Jun-07
6
Document Number: 73474
DS(on)
10
7
0.10
is specified
C
8
= 25 °C)
9
100
10
1
10 µs
1 ms
10 ms
100 µs
DC