SUM90P10-19L_08 VISHAY [Vishay Siliconix], SUM90P10-19L_08 Datasheet - Page 3

• Manufacturer Part Number: SUM90P10-19L_08
• Description: P-Channel 100-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73474
S-71207-Rev. D, 18-Jun-07
0.030
0.020
0.010
0.000
10.0
180
150
120
8.0
6.0
4.0
2.0
0.0
90
60
30
0
0.0
0
0
V
I
D
GS
40.0
= - 90 A
20
On-Resistance vs. Drain Current
= 10 thru 4V
V
DS
Q
1
V
V
Output Characteristics
g
DS
GS
– Drain-to-Source Voltage (V)
I
80.0
D
– Total Gate Charge (nC)
40
= 50 V
= 4.5 V
– Drain Current (A)
Gate Charge
120.0
60
2
V
DS
V
160.0
GS
= 80 V
80
= 10
3
200.0
100
3 V
240.0
120
4
15000
12000
9000
6000
3000
2.5
2.1
1.7
1.3
0.9
0.5
40
30
20
10
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
V
GS
I
D
20
C
= 10 V
T
V
= 20 A
T
0
rss
C
1.0
GS
J
Transfer Characteristics
= 125 °C
– Junction Temperature (°C)
V
– Gate-to-Source Voltage (V)
DS
25
Capacitance
– Drain-to-Source (V)
40
SUM90P10-19L
50
2.0
C
Vishay Siliconix
iss
25 °C
C
75
oss
60
100
www.vishay.com
3.0
125
80
- 55 °C
150
100
175
4.0
3