SI4427BDY-T1 VISHAY [Vishay Siliconix], SI4427BDY-T1 Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
SI4427BDY-T1
Manufacturer Part Number
SI4427BDY-T1
Description
P-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SI4427BDY-T1.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4427BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
40 457
Company:
Part Number:
SI4427BDY-T1-E3
Manufacturer:
Maxim
Quantity:
490
Company:
Part Number:
SI4427BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4427BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4427BDY
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
- 0.2
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
- Temperature (_C)
25
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
r
DS(on)
75
0.01
100
0.1
10
Limited
1
10
100
0.1
-2
Limited
I
125
D(on)
Single Pulse
T
A
Square Wave Pulse Duration (sec)
V
= 25_C
DS
150
New Product
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
BV
DSS
Limited
10
1
I
DM
30
25
20
15
10
5
0
10
Limited
-2
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Single Pulse Power, Junction-to-Ambient
100
10
10
-1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
1
2
S-31411—Rev. A, 07-Jul-03
(t)
Document Number: 72295
10
= 70_C/W
100
600
600