SI4427BDY-T1 VISHAY [Vishay Siliconix], SI4427BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4427BDY-T1
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72295
S-31411—Rev. A, 07-Jul-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
V
Source-Drain Diode Forward Voltage
= 12.6 A
GS
0.2
On-Resistance vs. Drain Current
= 15 V
10
20
= 2.5 V
V
T
SD
Q
J
g
= 150_C
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
20
40
0.6
30
60
0.8
V
V
GS
GS
T
= 4.5 V
= 10 V
40
80
J
= 25_C
1.0
100
1.2
50
New Product
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 12.6 A
= 10 V
2
6
T
V
V
0
J
GS
DS
C
- Junction Temperature (_C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
Vishay Siliconix
= 12.6 A
50
C
iss
18
6
Si4427BDY
75
100
24
www.vishay.com
8
125
150
10
30
3