SI4427BDY-T1 VISHAY [Vishay Siliconix], SI4427BDY-T1 Datasheet

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SI4427BDY-T1

Manufacturer Part Number
SI4427BDY-T1
Description
P-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Notes
a.
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 30
(V)
J
ti
Ordering Information: Si4427BDY
t A bi
0.0125 @ V
0.0195 @ V
0.0105 @ V
J
J
a
a
G
S
S
S
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
1
2
3
4
GS
GS
a
a
GS
Si4427BDY-T1 (with Tape and Reel)
= - 4.5 V
= - 2.5 V
Top View
(W)
= - 10 V
P-Channel 30-V (D-S) MOSFET
SO-8
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
- 12.6
- 11.5
- 9.2
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFETS
P-Channel MOSFET
10 secs
Typical
- 12.6
- 10.1
- 2.5
2.5
1.6
S
D
40
70
15
- 55 to 150
"12
- 30
- 50
Steady State
Maximum
Vishay Siliconix
- 9.7
- 7.7
- 1.3
1.5
0.9
50
85
18
Si4427BDY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI4427BDY-T1 Summary of contents

Page 1

... 2 SO Top View Ordering Information: Si4427BDY Si4427BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...

Page 2

... Si4427BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... New Product 6000 5000 4000 3000 2000 1000 100 0.030 0.025 0.020 0.015 0.010 T = 25_C J 0.005 0.000 0.8 1.0 1.2 Si4427BDY Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 12 1.4 1.2 1.0 0.8 0.6 ...

Page 4

... Si4427BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 = 250 mA 0 0.2 0 Temperature (_C DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72295 S-31411—Rev. A, 07-Jul-03 New Product - Square Wave Pulse Duration (sec) Si4427BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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