ST2301MSRG STANSON [Stanson Technology], ST2301MSRG Datasheet - Page 3

• Manufacturer Part Number: ST2301MSRG
• Description: P Channel Enhancement Mode MOSFET
• Manufacturer: STANSON [Stanson Technology]

ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Parameter
Symbol
V
R
V
I
(BR)DSS
t
t
I
I
DS(on)
C
GS(th)
V
Q
C
D(on)
Q
C
d(on)
d(off)
g
Q
GSS
DSS
tr
tf
oss
SD
rss
iss
gd
fs
gs
g
V
V
V
V
V
V
3
DS
V
V
V
V
DS
DS
GS
GS
I
GS
DS
DS
DS
DS
S
=VGS,I
=-1.6A,V
P Channel Enhancement Mode MOSFET
≦ -5V,V
≦ -5V,V
=-4.5V,I
=-2.5V,I
=0V,I
=0V,V
=-20V,V
=-20V,V
=-5V,I
V
Condition
V
I
GEN
V
V
V
T
GS
F=1MH
D
V
R
R
I
DS
DS
DD
≣ -2.8A
J
D
GS
G
=55 ℃
L
=-4.5V
=-1A
=6 Ω
=-4.5V
=6 Ω
=-6V
=-6V
=-6V
D
=0V
D
=-250uA
GS
GS
GS
D
=-250uA
D
D
=-2.8V
GS
= ± 12V
GS
GS
=-4.5V
=-2.5V
=-2.8A
=-2.0A
z
=0V
=0V
=0V
ST2301M
-0.48
Min Typ Max Unit
-20
-6
-3
ST2301M 2007. V1
0.135
0.220
0.75
-0.8
150
6.5
4.8
1.4
35
60
10
32
38
30
-3.0A
± 100
-1.5
-1.2
20
45
55
50
-10
8
-1
nC
nS
pF
nA
uA
Ω
V
V
A
S
V