st2301m Stanson Technology Co., Ltd., st2301m Datasheet
st2301m
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st2301m Summary of contents
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... DESCRIPTION The ST2301M is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package ...
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... P Channel Enhancement Mode MOSFET Symbol Typical V -20 DSS ± GSS T =25℃ -2 =70 ℃ =25℃ 1. =70 ℃ 0 150 J T -55/150 STG R 120 θ -3.0A Unit ℃ ℃ ℃ /W ST2301M 2007. V1 ...
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... V =0V GS F=1MH C z rss V =- d(on Ω =- =-4.5V t GEN d(off Ω ST2301M -3.0A Min Typ Max Unit -20 V -1.5 V -0.48 ± 100 - 0.135 Ω 0.220 6.5 S -0.8 -1.2 V 4.8 8 0.75 nC 1.4 35 150 ST2301M 2007. V1 ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 4 ST2301M 2007. V1 -3.0A ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 5 ST2301M 2007. V1 -3.0A ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 6 ST2301M 2007. V1 -3.0A ...
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... SOT-23 PACKAGE OUTLINE 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M P Channel Enhancement Mode MOSFET 7 ST2301M 2007. V1 -3.0A ...