ST2301MSRG STANSON [Stanson Technology], ST2301MSRG Datasheet - Page 2

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ST2301MSRG

Manufacturer Part Number
ST2301MSRG
Description
P Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet
ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted )
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150 ℃ )
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
Parameter
T
T
T
T
A
A
A
A
=25℃
=70 ℃
=25℃
=70 ℃
2
P Channel Enhancement Mode MOSFET
Symbol
R
V
V
T
I
P
I
I
T
DSS
GSS
STG
θ JA
DM
D
S
D
J
ST2301M
-55/150
Typical
1.25
-2.5
-1.5
-1.6
150
120
± 12
-20
-10
0.8
ST2301M 2007. V1
-3.0A
Unit
℃ /W
W
V
V
A
A
A

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