ST10F271E STMICROELECTRONICS [STMicroelectronics], ST10F271E Datasheet - Page 135

• Manufacturer Part Number: ST10F271E
• Description: 16-bit MCU with 128 Kbyte Flash memory and 8/12 Kbyte RAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ST10F271B/ST10F271E
24.6
Table 64.
1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2. Word and Double Word Programming times are provided as average values derived from a full sector programming time:
3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As
4. Not 100% tested, guaranteed by Design Characterization.
Word Program (32-bit)
Double Word Program (64-bit)
Bank 0 Program (256K)
(Double Word Program)
Sector Erase (8K)
Sector Erase (32K)
Sector Erase (64K)
Bank 0 Erase (256K)
Recovery from Power-Down (t
Program Suspend Latency
Erase Suspend Latency
Erase Suspend Request Rate
Set Protection
absolute value of a Word or Double Word Programming time could be longer than the average value.
ST10F271 implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations.
Parameter
Flash characteristics
Flash characteristics
V
(4)
DD
= 5 V ± 10%, V
(3)
(2)
(4)
(4)
(2))
PD
(4)
)
SS
0 cycles
T
= 0 V
Typical
A
= 25°C
1.6
0.6
0.5
1.1
0.8
1.7
1.3
5.6
4.0
35
60
20
40
–
–
–
(1)
0 cycles
13.6
11.9
150
2.0
0.9
0.8
2.0
1.8
3.7
3.3
80
40
10
30
20
90
T
Maximum
A
(1)
= 125°C
100k cycles
19.2
17.5
290
570
300
3.9
1.0
0.9
2.7
2.5
5.1
4.7
40
10
30
20
Unit
ms
µs
µs
µs
µs
µs
µs
s
s
s
s
s
Electrical characteristics
–
–
–
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
(4)
Min delay between 2
requests
Notes
135/180