k9f2808q0c-dcb0 Samsung Semiconductor, Inc., k9f2808q0c-dcb0 Datasheet - Page 8

• Manufacturer Part Number: k9f2808q0c-dcb0
• Description: 16m X 8 Bit , 8m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
Figure 2-2. K9F2816X0C (X16) ARRAY ORGANIZATION
Figure 1-2. K9F2816X0C (X16) FUNCTIONAL BLOCK DIAGRAM
NOTE : Column Address : Starting Address of the Register.
V
V
(=1,024 Blocks)
2nd Cycle
1st Cycle
3rd Cycle
CC
SS
32K Pages
* L must be set to "Low".
CE
RE
WE
Command
A
A
I/O 0
A
9
A
A
0
17
- A23
0
9
- A
7
I/O 1
A
A
A
10
18
1
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
(=256 Words)
Page Register
& High Voltage
CLE ALE
Page Register
Control Logic
256Word
256 Word
Command
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Generator
Register
I/O 2
A
A
A
11
19
2
WP
I/O 3
A
A
A
12
20
3
8 Word
8 Word
I/O 4
A
A
A
13
21
4
8
K9F2808U0C-VCB0,VIB0
I/O 5
A
A
A
I/O 0 ~ I/O 15
14
22
5
Global Buffers
(256 + 8)Word x 32768
Page Register & S/A
I/O Buffers & Latches
I/O 6
A
A
128M + 4M Bit
A
NAND Flash
15
23
16 bit
6
Y-Gating
ARRAY
1 Block =32 Pages
= (8K + 256) Word
1 Page = 264 Word
1 Block = 264 Word x 32 Pages
1 Device = 264Words x 32Pages x 1024 Blocks
I/O 7
A
A
L*
16
7
= (8K + 256) Word
= 132 Mbits
I/O8 to 15
L*
L*
L*
Output
Driver
FLASH MEMORY
Column Address
Row Address
(Page Address)
V
V
CC/
SS
I/0 0
I/0 15
V
CCQ