k9f2808q0c-dcb0 Samsung Semiconductor, Inc., k9f2808q0c-dcb0 Datasheet - Page 33

• Manufacturer Part Number: k9f2808q0c-dcb0
• Description: 16m X 8 Bit , 8m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Data Protection & Power up sequence
K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
circuit gets ready for any command sequences as shown in Figure 15. The two step command sequence for program/erase provides
additional software protection.
Figure 15. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
IL
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
during power-up and power-down and recovery time of minimum 10 s is required before internal
10 s
High
33
K9F2808U0C-VCB0,VIB0
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V