buk454-200 NXP Semiconductors, buk454-200 Datasheet - Page 4

• Manufacturer Part Number: buk454-200
• Description: Buk444-200a/b Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
April 1993
PowerMOS transistor
Fig.5. Typical output characteristics, T
I
D
Fig.6. Typical on-state resistance, T
1.5
1.0
0.5
20
15
10
20
15
10
= f(V
5
0
5
0
0
Fig.7. Typical transfer characteristics.
0
0
0
ID / A
ID / A
RDS(ON) / Ohm
GS
4.5 5
2
) ; conditions: V
2
VGS / V =
R
I
DS(ON)
D
4
2
4
= f(V
5.5
6
= f(I
6
Tj / C =
DS
); parameter V
8
D
4
6
8
20
); parameter V
VDS / V
VGS / V
ID / A
10
10
DS
6.5
= 25 V; parameter T
12
12
6
10
25
14
7
14
VGS / V =
BUK444-200A
GS
BUK454-200A
BUK454-200A
16
GS
16
8
7.5
j
j
= 25 ˚C .
= 25 ˚C .
18
18
150
10
7
5
8
20
8
6
4
20
10
20
j
4
Fig.9. Normalised drain-source on-state resistance.
a = R
V
Fig.8. Typical transconductance, T
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
6
5
4
3
2
1
0
GS(TO)
4
3
2
1
0
0
-60
0
DS(ON)
-60 -40 -20
gfs / S
VGS(TO) / V
a
Fig.10. Gate threshold voltage.
g
= f(T
-40
2
fs
/R
= f(I
DS(ON)25 ˚C
-20
4
j
); conditions: I
D
); conditions: V
6
0
0
20
20
8
= f(T
max.
typ.
min.
ID / A
Tj / C
Tj / C
40
10
40
j
); I
Normalised RDS(ON) = f(Tj)
60
D
BUK444-200A/B
12
60
D
= 1 mA; V
= 3.5 A; V
Product Specification
DS
80
80 100 120 140
14
= 25 V
100 120 140
BUK454-200A
16
j
= 25 ˚C .
DS
GS
18
= V
Rev 1.100
= 10 V
20
GS