buk454-200b NXP Semiconductors, buk454-200b Datasheet
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buk454-200b
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buk454-200b Summary of contents
Page 1
... R Drain-source on-state DS(ON) resistance PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK454-200A/B MAX. UNIT 200 9 175 ˚C 0.4 SYMBOL MAX. UNIT - 200 V - 200 -200A -200B - 9.2 8 6.5 5 ...
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... V = 200 ˚ 200 =125 ˚ BUK454-200A 3.5 A BUK454-200B D CONDITIONS 3 MHz 2 gen ...
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... T 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j- BUK444-200A VGS / VDS / f(V ); parameter BUK454-200A RDS(ON) / Ohm VGS / V = 5.5 4 6 ˚ f(I ); parameter V DS(ON 1E+ ...
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... 10000 1000 100 100 140 180 Fig.12. Typical capacitances f Product Specification BUK454-200A/B VGS(TO max. typ. min. - 100 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION 2 % typ ...
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... Fig.15. Normalised avalanche energy rating. DS BUK454-200A VGS 0 2 Fig.16. Avalanche energy test circuit Product Specification BUK454-200A/B WDSS 100 120 140 160 Tmb / f(T ); conditions DSS VDS - T.U. RGS shunt ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1996 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.17. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK454-200A/B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 7 Product Specification BUK454-200A/B Rev 1.000 ...