MMBTH10_07 WEITRON [Weitron Technology], MMBTH10_07 Datasheet - Page 3

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MMBTH10_07

Manufacturer Part Number
MMBTH10_07
Description
NPN 1.1 GHz RF Transistor
Manufacturer
WEITRON [Weitron Technology]
Datasheet
http://www.weitron.com.tw
WEITRON
MMBTH10
Typical Characteristics
0.1
100
10
80
60
40
20
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
25
0.1
1
0.1
Vce = 5V
Typical Pulsed Current Gain
Voltage vs Collector Current
V
0.2
CB
β = 10
vs Ambient Temperature
Collector-Cutoff Current
Base-Emitter Saturation
= 30V
125 °C
vs Collector Current
I - COLLECTOR CURRENT (mA)
T - AMBIENT TEMPERATURE ( C)
25 °C
I
- 40 °C
50
C
C
A
- 40 °C
- COLLECTOR CURRENT (mA)
0.5
1
75
25 °C
P 42
1
P 42
2
125 °C
100
5
10
125
°
20
10
20
50
150
3/6
0.15
0.05
0.8
0.6
0.4
0.2
350
300
250
200
150
100
0.2
0.1
50
1
0.01
0
0.1
0
SOT-23
V
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
CE
- 40 °C
β = 10
= 5V
25
I
Ambient Temperature
I
C
Power Dissipation vs
C
Collector Current
0.1
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
- 40 °C
TEMPERATURE ( C)
50
25 °C
P 42
1
75
1
25 °C
o
100
125 °C
10
125 °C
125
10
09-Feb-07
150
100
20

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