MMBTH10_07 WEITRON [Weitron Technology], MMBTH10_07 Datasheet - Page 2

• Manufacturer Part Number: MMBTH10_07
• Description: NPN 1.1 GHz RF Transistor
• Manufacturer: WEITRON [Weitron Technology]

ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted ) (Countinued)
http://www.weitron.com.tw
Collector-Emitter Voltage (I C =10mA , I B = 0 )
Collector-Base Voltage (I C =10µA , I E = 0)
Emitter-Base Voltage (I E =10µA , I C =0)
Collector cut-off current ( I E = 0 , V CB = 25V )
DC current gain (I C =4mA , V
Common-Base Feedback Capacitance
Emitter cut-off current ( I C = 0 , V EB = 2.0V )
Transition frequency (I C =4mA , V
Collector-Base Capacitance(V
Collector-Emitter Saturation (I C =4mA ,I B = 0.4mA )
Base-Emitter On Voltage (I C =4mA , V
(V
Collector Base Time Constant
(I C =4mV , V
WEITRON
CB
MMBTH10
= 10V , I E = 0 , f = 1MHz )
CB
= 10V , f = 31.8MHz )
Characteristics
CE
CB
= 10V )
=10V ,I
CE
= 10V , f =100MHz )
CE
E
= 10V )
= 0 , f =1.0MHz )
Symbol
V CE(sat)
V BE (on)
2/6
V CEO
V CBO
V EBO
I CBO
I EBO
rb’Cc
h FE
C
C
f T
cb
rb
Min
0.65
25
30
60
3
-
-
-
-
-
-
-
Typ
1.1
-
-
-
-
-
-
-
-
-
-
-
Max
100
100
0.95
0.5
0.65
0.7
-
-
-
-
9.0
-
09-Feb-07
Unit
nA
GH
nA
V
V
V
pF
ps
pF
V
V
-
Z