MMBTH10_07 WEITRON [Weitron Technology], MMBTH10_07 Datasheet
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MMBTH10_07
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MMBTH10_07 Summary of contents
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NPN 1.1 GHz RF Transistor P b Lead(Pb)-Free FEATURES Designed for VHF/UHF Amplifier Applications and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the 100mA~20mA Range in Common ...
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MMBTH10 ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted ) (Countinued) Characteristics Collector-Emitter Voltage (I C =10mA , Collector-Base Voltage (I C =10µ Emitter-Base Voltage (I E =10µ ...
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MMBTH10 Typical Characteristics Typical Pulsed Current Gain vs Collector Current 100 Vce = 5V 80 125 ° ° °C 0 0.1 0.2 0 COLLECTOR CURRENT (mA Base-Emitter ...
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MMBTH10 Common Base Y Parameters vs. Frequency Input Admittance 120 10V - -80 -120 100 200 f - FREQUENCY (MHz (BASE) Forward Transfer Admittance 120 ...
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MMBTH10 Common Emitter Y Parameters vs. Frequency Input Admittance 10V 100 200 f - FREQUENCY (MHz) Forward Transfer Admittance ...
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MMBTH10 SOT-23 Package Outline Dimensions TOP WEITRON http://www.weitron.com. 6/6 Unit:mm Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E ...