MB84VD21081 FUJITSU [Fujitsu Component Limited.], MB84VD21081 Datasheet - Page 8
![no-image](/images/no-image-200.jpg)
MB84VD21081
Manufacturer Part Number
MB84VD21081
Description
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Manufacturer
FUJITSU [Fujitsu Component Limited.]
Datasheet
1.MB84VD21081.pdf
(55 pages)
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8
MB84VD2108X
Legend : L
Notes : 1. Other operations except for indicated this column are inhibited.
Full Standby
Output Disable
Read from Flash
(Note 2)
Write to Flash
Read from SRAM
Write to SRAM
Temporary
Sector Group
Unprotection
Flash Hardware
Reset
Boot Block Sector
Write Protection
(Note 4)
Table 2.2 User Bus Operations (Flash
Operation
(Note 1, 3)
2. WE can be V
3. Do not apply CEf
4. It is also used for the extended sector group protections.
5. WP/ACC
6. LB
voltage levels.
WP/ACC
WP/ACC
S
V
, UB
IL
, H
S
; Don’t care or Open.
V
CEf
V
V
V
H
H
H
H
X
X
X
L
L
L
IH
ACC
IL
IH
IL
, X
; removal of boot sectors protection.
; protection of boot sectors.
if OE is V
(9 V) ; Program time will reduce by 40%.
CE1s CE2s OE WE SA
H
H
X
H
X
X
H
X
X
H
X
X
L
L
L
V
V
IL
IL
, CE1s
-85
or V
IL
, OE at V
X
H
X
X
X
H
H
X
X
X
L
L
L
L
L
IH
/MB84VD2109X
. See “ELECTRICAL CHARACTERISTICS 1.
V
X
H
X
H
H
X
X
X
X
L
L
IL
IH
and CE2s
initiates the write operations.
X
H
X
H
H
H
X
X
X
L
L
Word mode; CIOf
SA
SA
X
X
X
X
X
X
X
X
X
(Note 6)
V
LBs
IH
X
X
X
X
X
X
X
X
X
X
X
at a time.
(Note 6)
UBs
V
X
X
X
X
X
X
X
X
X
X
X
CC
-85
f, SRAM
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
DQ
D
D
DQ
D
D
X
X
OUT
OUT
0
IN
IN
to
7
Byte mode; CIOs
DC Characteristics
HIGH-Z
HIGH-Z
DQ
DQ
D
D
X
X
OUT
8
IN
15
to
RESET
V
H
H
H
H
H
H
X
L
ID
WP/ACC
V
(Note 5)
” for
SS
X
X
X
X
X
X
X
X
)
L
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