MB84VD21081 FUJITSU [Fujitsu Component Limited.], MB84VD21081 Datasheet - Page 50
![no-image](/images/no-image-200.jpg)
MB84VD21081
Manufacturer Part Number
MB84VD21081
Description
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Manufacturer
FUJITSU [Fujitsu Component Limited.]
Datasheet
1.MB84VD21081.pdf
(55 pages)
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50
MB84VD2108X
Note : t
* : 1 A Max. at T
Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Parameter
Symbol
ERASE AND PROGRAMMING PERFORMANCE (
DATA RETENTION CHARACTERISTICS (
• CE1s Controlled Data Retention Mode (Note 1)
I
t
V
DDS2
CDR
t
DH
R
2.7 V
GND
V
RC
V
CC
V
DH
: Read cycle time
IH
s
Parameter
CE1s
Data Retention Supply Voltage
Standby Current
Chip Deselect to Data Retention Mode Time
Recovery Time
A
40 C
See Note 2
t
CDR
Parameter Description
-85
100,000
Min.
/MB84VD2109X
Limits
Typ.
16
DATA RETENTION MODE
1
8
SRAM
V
CCS
0.2 V
)
Max.
V
300
360
10
50
DH
Flash
3.0 V
)
-85
cycle
Unit
s
s
s
s
Min.
1.5
t
0
RC
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Excludes system-level
overhead
Typ.
See Note 2
0.2
t
R
Comment
Max.
3.6
5*
Unit
ns
ns
V
A
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