MB84VD21081 FUJITSU [Fujitsu Component Limited.], MB84VD21081 Datasheet - Page 7
![no-image](/images/no-image-200.jpg)
MB84VD21081
Manufacturer Part Number
MB84VD21081
Description
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Manufacturer
FUJITSU [Fujitsu Component Limited.]
Datasheet
1.MB84VD21081.pdf
(55 pages)
- Current page: 7 of 55
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Notes : 1. Other operations except for indicated this column are inhibited.
Full Standby
Output Disable
Read from Flash
(Note 2)
Write to Flash
Read from SRAM
Write to SRAM
Temporary Sector
Group Unprotection
(Note 4)
Flash Hardware Reset
Boot Block Sector
Write Protection
Legend : L
DEVICE BUS OPERATIONS
Table 2.1 User Bus Operations (Flash
Operation
(Note1, 3)
2. WE can be V
3. Do not apply CEf
4. It is also used for the extended sector group protections.
5. WP/ACC
6. SA ; Don’t care or Open.
WP/ACC
WP/ACC
voltage levels.
V
IL
, H
V
V
V
V
ACC
IH
IL
IL
IH
; removal of boot sectors protection.
CEf
; protection of boot sectors.
, X
if OE is V
H
H
H
H
X
X
X
L
L
L
(9 V) ; Program time will reduce by 40%.
V
CE1s CE2s OE WE
V
IL
IL
H
X
H
X
H
X
H
X
X
H
X
X
L
L
L
, CE1s
or V
IL
, OE at V
MB84VD2108X
IH
, See “ELECTRICAL CHARACTERISTICS 1.
X
H
X
X
X
H
H
X
X
X
L
L
L
L
L
V
IL
IH
and CE2s
X
H
X
H
H
X
X
X
X
L
L
Word mode; CIOf
initiates the write operations.
H
H
H
H
X
X
X
X
X
L
L
(Note 6)
SA
V
X
X
X
X
X
X
X
X
X
X
X
IH
at a time.
LBs UBs
X
X
H
X
X
X
H
H
X
X
X
L
L
L
L
V
CC
-85
f, SRAM
H
H
H
X
X
X
X
X
X
X
X
L
L
L
L
/MB84VD2109X
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
HIGH-Z
HIGH-Z
HIGH-Z HIGH-Z
DQ
D
D
D
DQ
D
D
D
X
X
OUT
OUT
OUT
0
IN
IN
IN
to
7
Word mode; CIOs
DC Characteristics
HIGH-Z
HIGH-Z
DQ
DQ
D
D
D
D
D
D
X
X
OUT
OUT
OUT
8
IN
IN
IN
15
to
RESET WP/ACC
V
H
H
H
H
H
H
X
L
ID
V
(Note 5)
CC
” for
s)
X
X
X
X
X
X
X
X
L
-85
7
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