CM900DU-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DU-24NF_09 Datasheet - Page 3

• Manufacturer Part Number: CM900DU-24NF_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
1800
1600
1400
1200
1000
800
600
400
200
10
10
10
COLLECTOR-EMITTER VOLTAGE V
EMITTER-COLLECTOR VOLTAGE V
0
5
5
4
4
3
3
2
2
1
1
0
0
7
5
3
2
7
5
3
2
4
3
2
0
0
0
0
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
V
V
200
200
FORWARD CHARACTERISTICS
GE
GE
VOLTAGE CHARACTERISTICS
VOLTAGE CHARACTERISTICS
COLLECTOR CURRENT I
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
= 15V
= 15V
2
400 600
400 600
FREE-WHEEL DIODE
1
13V
15V
V
(TYPICAL)
(TYPICAL)
(TYPICAL)
(TYPICAL)
GE
4
800
800
= 20V
2
1000
1000
6
1200
1200
T
T
T
T
T
T
1400
1400
T
3
j
j
j
j
j
j
= 25°C
= 125°C
j
= 25°C
= 25°C
= 125°C
= 125°C
C
C
8
= 25°C
8V
(A)
(A)
1600
1600
12V
11V
10V
CE
EC
9V
1800
1800
10
(V)
(V)
4
3
1800
1600
1400
1200
1000
10
800
600
400
200
10
10
10
10
10
–1
10
0
8
6
4
2
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0
6
COLLECTOR-EMITTER SATURATION
–1
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
V
TRANSFER CHARACTERISTICS
GE
2
CE
VOLTAGE CHARACTERISTICS
8
3 5 7
= 0V
= 10V
4
CAPACITANCE–V
CHARACTERISTICS
10
HIGH POWER SWITCHING USE
10
MITSUBISHI IGBT MODULES
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
8
12
2
3 5 7
CM900DU-24NF
14
12
10
16
1
T
T
I
CE
C
I
T
I
j
j
C
2
C
= 25°C
= 125°C
16
= 1800A
j
= 25°C
= 360A
= 900A
C
GE
GE
C
3 5 7
C
18
oes
ies
res
(V)
(V)
CE
20
10
20
(V)
2
Feb. 2009