CM900DU-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DU-24NF_09 Datasheet - Page 2

• Manufacturer Part Number: CM900DU-24NF_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Note 1. I
*
*
*
*
V
V
I
I
I
I
P
T
T
V
I
V
I
V
(chip)
R
C
C
C
Q
t
t
t
t
t
Q
V
(chip)
R
R
R
R
R
R
1 : Case temperature (Tc’) measured point is just under the chips.
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
4 : The operation temperature is restrained by the permission temperature of female connector.
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
GES
j
stg
CES
C (Note 3)
iso
GE(th)
CE(sat)
(lead)
ies
oes
res
EC(Note 1)
th(j-c)
th(j-c)
th(c-f)
th(j-c’)
th(j-c’)
G
G
rr (Note 1)
If you use this value, R
—
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Note 1)
—
(Note 1)
Q
R
E
Q
R
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
(without lead resistance)
Module lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
(without lead resistance)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
Parameter
Parameter
th(f-a)
(Tj = 25°C, unless otherwise specified)
should be measured just under the chips.
j
) should not increase beyond 150°C.
*3
*1
*4
*2
(Tj = 25°C, unless otherwise specified)
G-E Short
C-E Short
T
Pulse
T
Pulse
T
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
V
I
±V
I
Ic = 900A, terminal-chip
V
V
V
V
V
R
I
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied (1/2 module)
Case temperature measured point is just under the chips (IGBT part)
Case temperature measured point is just under the chips (FWDi part)
C
C
E
E
C
C
C
CE
GE
CC
CE
CC
GE
G
= 900A
= 900A, V
’ = 96°C
= 90mA, V
= 900A, V
GE
= 25°C
= 25°C
= 0.35Ω, Inductive load
= V
= 10V
= 0V
= 600V, I
= 600V, I
= ±15V
= V
CES
GES
*1
, V
GE
GE
CE
, V
C
C
GE
= 900A, V
= 0V
= 15V
= 900A
CE
= 10V
= 0V
= 0V
Test conditions
Conditions
2
GE
= 15V
(Note 4)
j
) does not exceed T
T
T
j
j
= 25°C
= 125°C
(Note 2)
(Note 2)
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min.
0.35
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
CM900DU-24NF
rating.
–40 ~ +150
–40 ~ +125
3.5 ~ 4.5
3.5 ~ 4.5
Ratings
Limits
0.286
0.016
1200
1800
1800
2550
2500
1400
4800
±20
900
900
Typ.
1.8
2.0
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
0.049
0.078
0.021
0.034
Max.
140
600
200
800
300
500
2.5
3.2
2.2
16
—
—
—
—
—
1
8
1
3
Feb. 2009
N • m
N • m
Vrms
Unit
K/W
Unit
mΩ
mA
µA
nC
µC
°C
°C
nF
W
ns
ns
Ω
V
V
A
A
V
V
V
g