upa2200t1m Renesas Electronics Corporation., upa2200t1m Datasheet - Page 4

• Manufacturer Part Number: upa2200t1m
• Description: N-channel Mos Fet For Switching
• Manufacturer: Renesas Electronics Corporation.

4
100
40
30
20
10
80
60
40
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
3
2
1
0
0
-50 -25
-50 -25
0.1
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
T
T
V
ch
ch
GS
0
0
- Channel Temperature - °C
- Channel Temperature - °C
= 4.5 V
I
D
25 50 75 100 125 150 175
25
10 V
- Drain Current - A
1
V
GS
50
= 4.5 V
10 V
75 100 125 150 175
10
V
I
D
DS
I
Pulsed
= 1 mA
D
= 10 V
= 4 A
Data Sheet G19445EJ1V0DS
100
10000
1000
0.01
100
100
0.1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
80
60
40
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
10
0
1
0.001
0.1
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
f = 1 MHz
GS
V
= 0 V
V
T
GS
ch
DS
0.01
= −25°C
- Gate to Source Voltage - V
5
- Drain to Source Voltage - V
I
D
25°C
- Drain Current - A
1
125°C
75°C
0.1
10
μ
10
PA2200T1M
V
Pulsed
15
1
DS
I
Pulsed
D
= 10 V
= 8 A
C
C
C
iss
oss
rss
100
10
20