upa2200t1m Renesas Electronics Corporation., upa2200t1m Datasheet - Page 2

• Manufacturer Part Number: upa2200t1m
• Description: N-channel Mos Fet For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
V
0
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
τ = 1 s
Duty Cycle ≤ 1%
TEST CIRCUIT 1 SWITCHING TIME
PG.
μ
τ
CHARACTERISTICS
R
G
D.U.T.
Note
Note
R
V
DD
L
Note
V
Wave Form
I
Wave Form
D
GS
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
G
GS
GD
rr
fs
|
A
V
I
D
GS
0
0
= 25°C, All terminals are connected.)
10%
t
10%
d(on)
Data Sheet G19445EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
D
F
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 8 A
= 8 A, V
= 8 A, V
t
90%
on
= 10 Ω
= 30 V, V
= ±20 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V,
= 0 V,
= 15 V, I
= 10 V,
= 24 V,
= 5 V,
t
r
V
I
GS
D
TEST CONDITIONS
t
d(off)
GS
GS
D
D
D
D
= 0 V
= 0 V,
D
GS
μ
t
= 1 mA
= 4 A
= 8 A
= 4 A,
off
DS
s
= 4 A
90%
90%
= 0 V
10%
t
= 0 V
f
PG.
TEST CIRCUIT 2 GATE CHARGE
MIN.
1.0
3
I
G
50 Ω
= 2 mA
TYP.
31.7
0.85
870
160
9.2
3.4
5.3
8.7
3.0
3.2
18
23
80
22
15
μ
D.U.T.
PA2200T1M
MAX.
±10
2.5
1.2
23
31
1
UNIT
R
V
mΩ
mΩ
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
L
DD
A
A