upa2200t1m Renesas Electronics Corporation., upa2200t1m Datasheet - Page 3

• Manufacturer Part Number: upa2200t1m
• Description: N-channel Mos Fet For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
80
60
40
20
40
30
20
10
0
0
0
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
V
25
GS
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
DS
A
= 10 V
0.5
- Drain to Source Voltage - V
- Ambient Temperature - °C
1000
50
100
0.1
10
1
100
75
μ
1
100
1 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
125
4.5 V
A
Single Pulse
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
1.5
= 25°C)
Pulsed
150
10 m
Data Sheet G19445EJ1V0DS
175
2
PW - Pulse Width - s
100 m
1
0.0001
0.001
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.01
FORWARD TRANSFER CHARACTERISTICS
0
10
FORWARD BIAS SAFE OPERATING AREA
R
Single Pulse
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
th(ch-A)
T
ch
V
V
I
I
= −25°C
D(pulse)
D(DC)
DS
GS
=
125°C
0.1
113.6°C/Wi
25°C
75°C
- Drain to Source Voltage - V
- Gate to Source Voltage - V
1
100
1000
1
2
μ
PA2200T1M
V
Pulsed
10
3
DS
= 10 V
100
4
3