upa1950 Renesas Electronics Corporation., upa1950 Datasheet - Page 4

• Manufacturer Part Number: upa1950
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
400
350
300
250
200
150
250
100
200
150
400
300
200
100
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
V
V
I
T
D
GS
A
GS
= 1.5 A
= 125˚C
= 1.8 V
= 3.0 V
75˚C
25˚C
25˚C
T
ch
I
D
I
0
D
- Drain Current - A
- Channel Temperature -˚C
0.1
- Drain Current - A
0.1
T
A
= 125˚C
75˚C
25˚C
50
25˚C
1
1
V
100
GS
= 1.8 V
2.5 V
4.5 V
3.0 V
10
Data Sheet G15620EJ2V0DS
150
10
150
100
300
250
200
300
200
100
200
150
100
400
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
50
0
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
GS
T
V
A
GS
= 2.5 V
= 125˚C
= 4.5 V
75˚C
25˚C
25˚C
V
T
A
GS
I
D
= 125˚C
2
- Gate to Source Voltage - V
I
- Drain Current - A
D
0.1
75˚C
25˚C
25˚C
- Drain Current - A
0.1
4
1
1
6
I
D
= 1.5 A
PA1950
10
8
10