upa1950 Renesas Electronics Corporation., upa1950 Datasheet - Page 3

• Manufacturer Part Number: upa1950
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
1.0
1.5
0.0
0.5
80
60
40
20
10
0
8
6
0
4
2
50
0.0
0
V
I
D
Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
= 10 V
T
V
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ch
T
0.2
DS
A
0
- Channel Temperature - ˚C
- Ambient Temperature - ˚C
- Drain to Source Voltage - V
60
0.4
50
90
V
0.6
GS
A
= 4.5 V
= 25°C)
100
120
1.8 V
0.8
4.0 V
2.5 V
150
Data Sheet G15620EJ2V0DS
150
1.0
0.00001
0.0001
0.001
0.01
100
100
0.01
0.01
0.1
0.1
100
10
10
0.1
10
1
1
0.1
1
0.01
0
V
FORWARD TRANSFER CHARACTERISTICS
V
FORWARD BIAS SAFE OPERATING AREA
DS =
DS
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
= 10V
V
10 V
V
DS
GS
0.5
- Drain to Source Voltage - V
0.1
- Gate to Sorce Voltage - V
I
D
1
Single Pulse
Mounted on 250 mm x 35 m Copper Pad
Connected to Drain Electrode in
50 mm x 50 mm x 1.6 mm FR-4 Board
- Drain Current - A
1.0
1
T
A
2
10
= 125 ˚C
1.5
75 ˚C
25 ˚C
25 ˚C
10
PA1950
100
2.0
100
3