upa1950 Renesas Electronics Corporation., upa1950 Datasheet

upa1950

Manufacturer Part Number

upa1950

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1950.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

Note Marking: TM

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

directly by a 1.8 V power source.

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

FEATURES

Notes 1. PW

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (2unit)

Total Power Dissipation (1unit)

Channel Temperature

Storage Temperature

This device features a low on-state resistance and excellent

The

1.8 V drive available

Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

DS(on)4

PART NUMBER

2. Mounted on FR-4 board, t

PA1950TE

PA1950 is a switching device which can be driven

G15620EJ2V0DS00 (2nd edition)

January 2002 NS CP(K)

= 130 m

= 176 m

= 205 m

= 375 m

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

Note

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

= 25°C)

= 0 V)

SC-95 (Mini Mold Thin Type)

Note2

= –4.5 V, I

= –3.0 V, I

= –2.5 V, I

= –1.8 V, I

PACKAGE

5 sec.

= 25°C)

= –1.5 A)

= –1.0 A)

FOR SWITCHING

D(pulse)

D(DC)

DSS

GSS

stg

DATA SHEET

–55 to +150

m8.0

m2.5

m7.0

1.15

0.57

MOS FIELD EFFECT TRANSISTOR

–12

150

°C

0.32

+0.1

–0.05

PACKAGE DRAWING (Unit : mm)

Gate 1

Gate

Protection

Diode

0.95

2.9 ±0.2

1.9

Source 1

Drain 1

EQUIVALENT CIRCUIT

0.95

6: Drain1

1: Gate1

5: Source1

Body

Diode

PA1950

Gate 2

Gate

Protection

Diode

4: Drain2

3: Gate2

2: Source2

0.9 to 1.1

0.65

0.16

0 to 0.1

Source 2

Drain 2

2001

+0.1

–0.06

Body

Diode

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upa1950 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1950 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 Pulsed V = ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 350 300 T = 125˚C A 250 75˚C 25˚C 200 25˚C 150 1 0.01 0 Drain Current - A D DRAIN TO SOURCE ON-STATE ...

Page 5

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 MHz V C iss 100 C oss C rss 10 0 Drain to Source Voltage - V DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 ...

Page 6

Data Sheet G15620EJ2V0DS PA1950 ...

Page 7

Data Sheet G15620EJ2V0DS PA1950 7 ...

Page 8

The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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