upa1870bgr-9jg Renesas Electronics Corporation., upa1870bgr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1870bgr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

50
40
30
20
10
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
40
30
20
10
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
0
0.01
-50
10
0.1
I
Pulsed
D
= 3.0 A
V
T
GS
A
SWITCHING CHARACTERISTICS
T
= 125°C
= 2.5 V
ch
t
4.0 V
4.5 V
t
d(off)
d(on)
t
t
75°C
25°C
25°C
0.1
f
r
0
- Channel Temperature - C
I
I
D
D
- Drain Current - A
- Drain Current - A
50
1
1
100
10
V
V
R
V
Pulsed
DD
GS
G
GS
= 10
= 10.0 V
= 4.0 V
= 2.5 V
Data Sheet G16741EJ1V0DS
150
100
10
10000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
10
50
40
30
20
10
5
4
3
2
1
0
0
0.1
0
0
I
D
DYNAMIC INPUT CHARACTERISTICS
= 6.0 A
V
DS
V
V
GS
2
- Drain to Source Voltage - V
DD
2
= 4.0 V
Q
- Gate to Source Voltage - V
10.0 V
16.0 V
G
- Gate Charge - nC
1
4
4
6
6
10
8
V
f = 1.0 MHz
GS
C
C
8
C
oss
rss
PA1870B
I
Pulsed
= 0 V
D
10
iss
= 3.0 A
100
10
12
5