upa1870bgr-9jg Renesas Electronics Corporation., upa1870bgr-9jg Datasheet - Page 2

• Manufacturer Part Number: upa1870bgr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0
TEST CIRCUIT 1 SWITCHING TIME
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
350 s, Duty Cycle
Note
Note
R
V
DD
L
Note
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
2%
| y
V
V
t
t
I
DS(on)1
DS(on)2
DS(on)3
C
Q
Q
I
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
V
DSS
GSS
t
t
GS
DS
t
oss
GD
A
fs
iss
rss
GS
rr
r
f
0
0
G
DS
rr
|
= 25°C)
10%
t
d(on)
90%
Data Sheet G16741EJ1V0DS
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
I
V
I
I
di/dt = 50 A/ s
t
D
F
F
on
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 6.0 A, V
= 6.0 A, V
= 6.0 A
10% 10%
t
= 10
r
= 20.0 V, V
= 10.0 V, I
= 10.0 V, I
= 10.0 V
= ±12.0 V, V
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 0 V
= 10.0 V, I
= 4.0 V
= 16.0 V
= 4.0 V
V
TEST CONDITIONS
GS
t
d(off)
GS
GS
t
D
D
D
off
90%
D
D
D
= 0 V
= 0 V
= 3.0 A
= 3.0 A
= 3.0 A
GS
90%
t
= 1.0 mA
= 3.0 A
= 3.0 A
f
DS
= 0 V
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
12.0
13.0
15.0
0.5
5
I
G
TYP.
50
16.0
16.5
20.0
= 2 mA
720
166
125
245
315
305
295
450
1.0
8.0
1.7
3.5
0.8
48
D.U.T.
MAX.
20.0
21.0
27.0
1.0
10.0
1.5
PA1870B
UNIT
m
m
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L