upa1870bgr-9jg Renesas Electronics Corporation., upa1870bgr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1870bgr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1000
0.01
120
100
100
0.1
80
60
40
20
10
0
1
0.1
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
Single pulse
Mounted on ceramic board of
50 cm
I
D(DC)
R
(at V
DS(on)
25
2
V
T
x 1.1 mm
GS
DS
Limited
A
= 4.5 V)
- Ambient Temperature - C
- Drain to Source Voltage - V
1000
DC (2 units)
100
50
0.1
10
1
1 m
1
Single pulse
P
D
75
(FET1) : P
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
D
(FET2) = 1:1
10
125
A
PW = 10 s
= 25°C)
10 ms
100 ms
1 ms
150
100 m
Data Sheet G16741EJ1V0DS
100
175
PW - Pulse Width - s
1
Mounted on FR-4 board of
25 cm
Mounted on ceramic board of
50 cm
2
x 1.6 mm
2
2.5
1.5
0.5
x 1.1 mm
10
2
1
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
T
A
100
- Ambient Temperature - C
50
Mounted on ceramic board of
50 cm
75
2
x 1.1 mm, 2 units
Mounted on FR-4 board of
50 cm
1000
100
2
x 1.6 mm, 2 units
125
150
PA1870B
175
3