upa1850gr-9jg Renesas Electronics Corporation., upa1850gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1850gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

0.1
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
0.4
V
F(S-D)
1000
100
0.1
10
- Source to Drain Voltage - V
0.8
1
1m
10m
1.2
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
V
GS
= 0 V
Data Sheet D11818EJ2V0DS00
100m
1.6
PW - Pulse Width - S
1
0
5
4
3
2
1
0
I
10
D
DYNAMIC INPUT CHARACTERISTICS
= -2.5 A
Mounted on Ceramic Substrate
of 5000 mm x 1.1 mm
Single Pulse
P
D
(FET1) : P
3
V
Q
V
DD
G
DD
2
100
D
- Gate Charge - nC
= -10 V
(FET2) = 1:1
62.5
= -4 V
6
˚C/W
9
1000
12
PA1850
15
5