upa1850gr-9jg Renesas Electronics Corporation., upa1850gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1850gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
0.001
0.01
100
100
0.1
10
0.1
40
80
60
20
10
1
1
0
0.1
0
V
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
DS
V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DS
= 10 V
= 10 V
TRANSFER CHARACTERISTICS
V
30
GS
T
A
- Gate to Source Voltage - V
- Ambient Temperature - ˚C
I
D
T
1
1
A
- Drain Current - A
60
= 25 ˚C
25 ˚C
90
125 ˚C
75 ˚C
2
10
A
= 25°C)
120
Data Sheet D11818EJ2V0DS00
150
100
3
250
200
150
100
50
0.01
100
1.5
0.5
0.1
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.1
1
0
1
0.1
50
V
V
I
T
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
D
GS
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1mm
P
FORWARD BIAS SAFE OPERATING AREA
DS
A
D
= 1 mA
(FET1) : P
= 10 V
= 2.5 V
=
125˚C
V
75˚C
25˚C
25˚C
T
DS
ch
I
D
- Drain to Source Voltage - V
D
0
(FET2) = 1:1
- Channel Temperature - ˚C
- Drain Current - A
1.0
1
2
50
10.0
10
100
PA1850
100.0
100
150
3